E-pHEMT complements HBT - may challenge below 3 V

HBT vs. PHEMT vs. MESFET: What's best and why

The properties of HBTs, HEMTs, PHEMTs and MESFETs are reviewed and discussed in the context of their suitability for various applications. Noise, power and high frequency performance is reviewed and the physical mechanisms dictating their values are discussed. The reliability characteristics of the devices are discussed and system applications are reported.

Reliability Qualification Challenges of a pHEMT-HBT Hybrid Process

Approach: Wafers and Products The BiHEMT process architecture is a hybrid GaAs/InGaP HBT process co-integrated with an optically-defined 0.7 um gate, InGaP etch-stop, pseudomorphic high electron mobility (pHEMT) process. Both enhancement-mode and depletionmode pHEMT transistors are available. This process offers both power amplifier and RF switch capability, as well as low-noise performance to ...

On Wafer Reliability Test Bench for PHEMT and HBT Technologies

Fast reliability testing is a key point for IlI-V technologies. This is particularly true when modifications have to be implemented on the production line. Such modifications can be soned in four categories: raw material, new equipment, prncess slep and design rule modifications. Endurance tests have to be performed to ensure that through the modified steps the reliability of the technology has...

Mass dependence of HBT correlations in e + e − annihilation

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